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CPV364M4Kpbf www.vishay.com vishay semiconductors revision: 11-jun-13 1 document number: 94488 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 igbt sip module (short circuit rated ultrafast igbt) features ? short circuit rated ultraf ast: optimized for high speed > 5.0 khz, and short circuit rated to 10 s at 125 c, v ge = 15 v ? fully isolated printed circuit board mount package ? switching-loss rating includes all tail losses ?hexfred ? soft ultrafast diodes ? ul approved file e78996 ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description the igbt technology is the key to vishays semiconductors advanced line of ims (insulated metal substrate) power modules. these modules ar e more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate -drive requirements of the familiar power mosfet. this superior technology has now been coupled to a state of the art materials system that maximizes power throughput wi th low thermal resistance. this package is highly suited to motor drive applications and where space is at a premium. notes (1) repetitive rating; v ge = 20 v, pulse width limited by maximum junction temperature (see fig. 20) (2) v cc = 80 % (v ces ), v ge = 20 v, l = 10 h, r g = 10 ? (see fig. 19) product summary output current in a typical 20 khz motor drive i rms per phase (3.1 kw total) with t c = 90 c 11 a rms t j 125 c supply voltage 360 v dc power factor 0.8 modulation depth (see fig. 1) 115 % v ce(on) (typical) at i c = 13 a, 25 c 1.8 v package sip circuit three phase inverter ims-2 rohs compliant absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 600 v continuous coll ector current i c t c = 25 c 24 a t c = 100 c 13 pulsed collector current i cm (1) 48 clamped inductive load current i lm (2) 48 short circuit withstand time t sc t c = 100 c 9.3 s gate to emi tter voltage v ge 20 v isolation voltage v isol t = 1 min, any terminal to case 2500 v rms maximum power dissipation, each igbt p d t c = 25 c 63 w t c = 100 c 25 operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering temperature for 10 s, (0.063" (1.6 mm) from case) 300 mounting torque 6-32 or m3 screw 5 to 7 (0.55 to 0.8) lbf ? in (n ?? m)
CPV364M4Kpbf www.vishay.com vishay semiconductors revision: 11-jun-13 2 document number: 94488 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse width ? 80 s, duty factor ? 0.1 % (2) pulse width 5.0 s; single shot thermal and mechanical specifications parameter symbol typ. max. units junction to case, each igbt, one igbt in conduction r thjc (igbt) - 2.2 c/w junction to case, each diode, one diode in conduction r thjc (diode) - 3.7 case to sink, flat , greased surface r thcs (module) 0.10 - weight of module 20 - g 0.7 - oz. electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units collector to emitte r breakdown voltage v (br)ces (1) v ge = 0 v, i c = 250 a 600 - - v temperature coeff. of breakdown voltage ? v (br)ces ?? t j v ge = 0 v, i c = 1.0 ma - 0.63 - v/c collector to emitter saturation voltage v ce(on) i c = 13 a v ge = 15 v ? see fig. 2, 5 - 1.80 2.3 v i c = 24 a - 1.80 - i c = 13 a, t j = 150 c - 1.56 1.73 gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 3.0 - 6.0 temperature coeff. of threshold voltage ? v ge(th) / ? t j -- 13-mv/c forward transconductance g fe (2) v ce = 100 v, i c = 10 a 11 18 - s zero gate voltage collector current i ces v ge = 0 v, v ce = 600 v - - 250 a v ge = 0 v, v ce = 600 v, t j = 150 c - - 3500 diode forward voltage drop v fm i c = 15 a see fig. 13 -1.31.7 v i c = 15 a, t j = 150 c - 1.2 1.6 gate to emitter leakage current i ges v ge = 20 v - - 100 na
CPV364M4Kpbf www.vishay.com vishay semiconductors revision: 11-jun-13 3 document number: 94488 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ? ? ? ? ? ? ? ? ? ? ? ? ? switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units total gate charge (turn-on) q g i c = 13 a v cc = 400 v ? v ge = 15 v ? see fig. 8 - 110 170 nc gate to emitter charge (turn-on) q ge -1421 gate to collector charge (turn-on) q gc -4974 turn-on delay time t d(on) t j = 25 c ? i c = 13 a, v cc = 480 v ? v ge = 15 v, r g = 10 ?? energy losses include tail and diode ? reverse recovery ? see fig. 9, 10, 18 -50- ns rise time t r -30- turn-off delay time t d(off) - 110 170 fall time t f - 91 140 turn-on switching loss e on -0.56- mj turn-off switching loss e off -0.28- total switching loss e ts - 0.84 1.1 short circuit withstand time t sc v cc = 360 v,t j = 125 c ? v ge = 15 v, r g = 10 ? , v cpk < 500 v 10 - - s turn-on delay time t d(on) t j = 150 c, see fig. 9, 10, 11, 18 ? i c = 13 a, v cc = 480 v ? v ge = 15 v, r g = 10 ??? energy losses include tail and ? diode reverse recovery -47- ns rise time t r -30- turn-off delay time t d(off) - 250 - fall time t f - 150 - total switching loss e ts -1.28-mj internal emitter inductance l e measured 5 mm from package - 7.5 - nh input capacitance c ies v ge = 0 v ? v cc = 30 v ? ? = 1.0 mhz ? see fig. 7 - 1600 - pf output capacitance c oes - 130 - reverse transfer capacitance c res -55- diode reverse recovery time t rr t j = 25 c see fig. 14 i f = 15 a ? v r = 200 v ? di/dt = 200 a/s -4260 ns t j = 125 c - 74 120 diode peak reverse recovery charge i rr t j = 25 c see fig. 15 -4.06.0 a t j = 125 c - 6.5 10 diode reverse recovery charge q rr t j = 25 c see fig. 16 - 80 180 nc t j = 125 c - 220 600 diode peak rate of fall of recovery ? during t b di (rec)m /dt t j = 25 c see fig. 17 - 188 - a/s t j = 125 c - 160 -
CPV364M4Kpbf www.vishay.com vishay semiconductors revision: 11-jun-13 4 document number: 94488 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical output characteristics fig. 4 - maximum collector current vs. case temperature fig. 5 - typical collecto r to emitter voltage vs. junction temperature 0.1 1 10 100 0 2 4 6 8 10 12 14 16 18 f, frequency (khz) load current (a) tc = 90c tj = 125c power factor = 0.8 modulation depth = 1.15 vcc = 50% of rated voltage 0.00 0.59 1.17 1.76 total output power (kw) 3.51 5.27 2.34 2.93 4.10 4.68 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j t = 150 c j 1 10 100 5 6 7 8 9 10 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j t = 150 c j 0 5 10 15 20 25 30 0 20 40 60 80 100 120 140 160 dc square wave (d=0.50) 80% rated vr applied see note (2) t c , case temperature (c) maximum dc collector current (a) -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 26 c i = a 13 c i = a 6.5 c
CPV364M4Kpbf www.vishay.com vishay semiconductors revision: 11-jun-13 5 document number: 94488 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 6 - maximum igbt effective transient thermal impedance, junction to case fig. 7 - typical capacitance vs. collector to emitter voltage fig. 8 - typical gate charge vs. gate to emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching lo sses vs. junction temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 1 10 100 0 500 1000 1500 2000 2500 3000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 20 40 60 80 100 120 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 13a cc c 0 10 20 30 40 50 0.5 1.0 1.5 r , gate resistance ( ) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 13a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 26 c i = a 13 c i = a 6.5 c 10
CPV364M4Kpbf www.vishay.com vishay semiconductors revision: 11-jun-13 6 document number: 94488 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - typical switching losses vs. collector to emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current 0 5 10 15 20 25 30 0.0 1.0 2.0 3.0 4.0 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 480v v = 15v g j cc ge 10 1 10 100 1000 1 10 100 1000 c ce i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j v , collector-to-emitter voltage (v) 1 10 100 0.8 1.2 1.6 2.0 2.4 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j
CPV364M4Kpbf www.vishay.com vishay semiconductors revision: 11-jun-13 7 document number: 94488 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 14 - typical reverse recovery time vs. di f /dt fig. 15 - typical re covery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs di f /dt 20 40 60 80 100 0 0 0 1 0 0 1 f di /dt - (a/s) t - (ns) rr i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 0 0 0 1 0 0 1 f di /dt - (a/s) i - (a) irrm i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c r j j 0 200 400 600 800 0 0 0 1 0 0 1 f di /dt - (a/s) rr q - (nc) i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c r j j 100 1000 0 0 0 1 0 0 1 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c r j j
CPV364M4Kpbf www.vishay.com vishay semiconductors revision: 11-jun-13 8 document number: 94488 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 18a - test circui t for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr fig. 18e - macro waveforms for figure 18as test circuit same type device as d.u.t. d.u.t. 430 f 80 % of v ce t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) eon = diode reverse recovery energy tx erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2
CPV364M4Kpbf www.vishay.com vishay semiconductors revision: 11-jun-13 9 document number: 94488 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 19 - clamped inductive load test circuit f ig. 20 - pulsed collector current test circuit circuit configuration d.u.t. 50 v 6000 f 100 v 1000 v l v c 0 - 480 v r l = 480 v 4 x i c at 25 c 3 618 15 41016 9 12 71319 q1 q2 q3 d1 d2 d3 d4 d5 d6 q4 q5 q6 1 links to related documents dimensions www.vishay.com/doc?95066
document number: 95066 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 30-jul-07 1 ims-2 (sip) outline dimensions vishay semiconductors dimensions in millimeters (inches) notes (1) tolerance uless otherwise sp ecified 0.254 mm (0.010") (2) controlling dimension: inch (3) terminal numbers are sh own for reference only ims-2 package outline (13 pins) 7.87 (0.310) 5.46 (0.215) 1.27 (0.050) 6.10 (0.240) 3.05 0.38 (0.120 0.015) 0.51 (0.020) 0.38 (0.015) 62.43 (2.458) 53.85 (2.120) ? 3.91 (0.154) 2 x 21.97 (0.865) 3.94 (0.155) 4.06 0.51 (0.160 0.020) 5.08 (0.200) 6 x 1.27 (0.050) 13 x 2.54 (0.100) 6 x 0.76 (0.030) 13 x 1 3 4 6 7 9 10 12 13 15 16 18 19 17 14 11 258
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